RJF0613JSP Datasheet | Renesas

Target Specifications Datasheet 60 V - 10 A - N Channel MOS FET Power Switching R07DS0874EJ0100 Rev.1.00 Aug 29, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in...