RJH1CD5DPQ-A0 - High Speed Power Switching

Product Overview

Renesas

Datasheet Details

Part number	RJH1CD5DPQ-A0
Manufacturer	Renesas
File Size	110.41 KB
Description	High Speed Power Switching
Datasheet	RJH1CD5DPQ-A0 Datasheet
Additional preview pages of the RJH1CD5DPQ-A0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (trr = 100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0451EJ0100 Rev.1.00 Jul 22, 2011 Outline.

📁 Similar Datasheet

RJH3047 - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH3047ADPK - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH1CD5DPQ-E0 - IGBT
RJH1CD6DPQ-A0 - IGBT
RJH1CD6DPQ-E0 - IGBT
RJH1CD7DPQ-A0 - IGBT
RJH1CD7DPQ-E0 - IGBT
RJH1CF4RDPQ-80 - High Speed Power Switching

Published: Jul 20, 2012 |