RJH60D3DPP-M0
Overview
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1 23
- Collector G
- Emitter E
