Datasheet4U Logo Datasheet4U.com

RJH60D7BDPQ-E0 - IGBT

Key Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (25 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline.

📥 Download Datasheet

Full PDF Text Transcription for RJH60D7BDPQ-E0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RJH60D7BDPQ-E0. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.3.00 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.)  L...

View more extracted text
0 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 123 1. Gate 2. Collector G 3. Emitter 4.

More Datasheets from Renesas

Part Number Description
RJH60D7ADPK IGBT
RJH60D7DPM IGBT
RJH60D7DPQ-E0 IGBT
RJH60D0DPM IGBT
RJH60D0DPQ-A0 IGBT
RJH60D1DPP-A0 IGBT
RJH60D3DPP-M0 IGBT
RJH60D5DPM IGBT
RJH60D5DPQ-A0 IGBT
RJH60D5DPQ-E0 IGBT