RJH60F5DPQ-A0 Description
Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching.
RJH60F5DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology