RJH60F5DPQ-A0 - High Speed Power Switching

Product Overview

Renesas

Datasheet Details

Part number	RJH60F5DPQ-A0
Manufacturer	Renesas
File Size	150.21 KB
Description	High Speed Power Switching
Datasheet	RJH60F5DPQ-A0 Datasheet
Additional preview pages of the RJH60F5DPQ-A0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Outline.

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Published: Jul 20, 2012 |