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RJH60F7DPQ-A0 Datasheet High Speed Power Switching

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power.

Key Features

  • 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011.
  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline 2B.

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RJH60F7DPQ-A0 Distributor