RJH60F7DPQ-A0 Datasheet | Renesas

Preliminary Datasheet 0B 600 V - 50 A - IGBT High Speed Power Switching Features 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 - Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) - Built in fast recovery diode in one package - Trench gate and thin wafer technology - High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline 2B RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) 4 G 1. Gate 2. Collector 3. Emitter 4. Collector 1 2 .DataSheet.net/...