RJH60M3DPE
RJH60M3DPE is IGBT manufactured by Renesas.
Preliminary Datasheet
600 V
- 17 A
- IGBT Application: Inverter
Features
- Short circuit withstand time (8 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
.DataSheet.net/
1. Gate 2. Collector 3. Emitter 4....
