RJH60M3DPE - IGBT

Features

Short circuit withstand time (8 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline.

Renesas

Datasheet Details

Part number	RJH60M3DPE
Manufacturer	Renesas
File Size	97.58 KB
Description	IGBT
Datasheet	RJH60M3DPE Datasheet
Additional preview pages of the RJH60M3DPE datasheet.

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Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E www.DataSheet.net/ 1. Gate 2. Collector 3. Emitter 4.

Published: Jul 20, 2012 |