Renesas Electronics RJK0301DPB
Silicon N Channel Power MOS FET Power Switching
| Part No. | RJK0301DPB |
|---|---|
| Datasheet | RJK0301DPB Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel Power MOS FET Power Switching |
| Buy | Stock & Price |
FEATURES
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● High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Note1 Ratings 30 +16/ –12 60 240 60 30 90 65 1.93 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.9.00 Apr 19, 2006 page 1 of 6 RJK0301DPBELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero g...
