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RJK0332DPB-01 - Silicon N-Channel MOS FET

General Description

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Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 3.6 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

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Full PDF Text Transcription (Reference)

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RJK0332DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 3.6 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS0268EJ0500 (Previous: REJ03G1641-0400) Rev.5.00 Mar 01, 2011 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.