RJK03A04DPA
RJK03A04DPA is manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0210 Power Switching Rev.2.10
May 13, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)
- Pb-free
- Halogen-free
- -
- -
- Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2...
