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RJK0629DPN Datasheet PDF

Renesas Electronics RJK0629DPN

N-Channel Power MOS FET

Part No. RJK0629DPN
Datasheet RJK0629DPN Download
Manufacturer
Renesas Electronics
Description N-Channel Power MOS FET
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RJK0629DPN datasheet page 1 preview

FEATURES

● VDSS: 60 V
● RDS(on): 4.5 m (Max)
● ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 123 1G

ABSOLUTE MAXIMUM RATINGS

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C, Tch  150C, L = 100 H 3. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP Pch Note3
●ch-c Tch Tstg Preliminary Datasheet R07DS1062EJ0200 (Previous: REJ03G1873-0100) Rev.2.00 Apr 09, 2013 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Value 60 20 85 340 85 340 55 100 1.25 150 –55 to +150 (Ta = 25C) Unit V V A A A A A W C/W C C R07DS1062EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0629DPN Preliminary

ELECTRICAL CHARACTERISTICS

Item Drain to source breakdown vol...
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