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RJK0822SPN - Silicon N Channel Power MOS FET

Datasheet Summary

Features

  • Low on-resistance RDS(on) = 7.9mΩ typ. (at VGS = 10V).
  • High speed switching.
  • Low drive current.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike).

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Datasheet Details

Part number RJK0822SPN
Manufacturer Renesas
File Size 265.36 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0822SPN Datasheet
Additional preview pages of the RJK0822SPN datasheet.

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Full PDF Text Transcription

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RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China market. Rev.1.00, September.26.2007, page 1 of 7 RJK0822SPN Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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