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RJK1526DPE - N-Channel Power MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

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RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L) 4 : PRSS0004AE-B LDPAK(S)-(1) 4 : PRSS0004AE-C LDPAK(S)-(2) ) 4 D G 1 1 2 3 1 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 RJK1526DPJ RJK1526DPE www.DataSheet.co.