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RJK4006DPD - Silicon N Channel MOS FET

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK4006DPD
Manufacturer Renesas
File Size 95.70 KB
Description Silicon N Channel MOS FET
Datasheet download datasheet RJK4006DPD Datasheet
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Full PDF Text Transcription

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RJK4006DPD Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 2, 4 12 3 1 3 REJ03G1547-0100 Rev.1.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS IDNote4 ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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