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RJK4007DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Single pulse
2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
G
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G0581-0200 Rev.2.00
Jan 05, 2009
D
1. Gate 2. Drain 3.