Renesas Electronics RJK4518DPK
Silicon N-Channel MOSFET
| Part No. | RJK4518DPK |
|---|---|
| Datasheet | RJK4518DPK Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C)● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1 2 3 G S Preliminary Datasheet R07DS0132EJ0200 (Previous: REJ03G1529-0100) Rev.2.00 Sep 08, 2010 1. Gate 2. Drain (Flange) 3. Source
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2●ch-c Tch Tstg Ratings 450 30 39 117 39 117 10 5.6 200 0.625 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W C/W C C R07DS0132EJ0200 Rev.2.00 Sep 08, 2010 Page...
