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RJK6034DPD-E0 Datasheet N-channel Power MOSFET

Manufacturer: Renesas

Overview: Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power.

Key Features

  • Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline.

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