RJL6013DPE Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching
- Part: RJL6013DPE
- Description: N-Channel Power MOSFET
- Manufacturer: Renesas
- Size: 142.79 KB
Other RJL6013DPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJL6013DPP | Silicon N Channel MOS FET High Speed Power Switching |