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RJP6065DPM Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline.

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