RJP6065DPM Description
Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching.
RJP6065DPM Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010