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RJP6065DPM - N-Channel IGBT

General Description

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Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline.

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Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.