RKR0503BKH
RKR0503BKH is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low reverse current drop and suitable for high efficiency rectifying.
- Thin Ultra small Resin Package (TURP) is suitable for pact and high-density surface mount design.
Ordering Information
Part No. RKR0503BKH
Laser Mark S9
Package Name TURP
Package Code PUSF0002ZC-A
Pin Arrangement
Cathode mark Mark
1 S9 2
1. Cathode 2. Anode
REJ03G1741-0100 Rev.1.00 Nov 17, 2008 Page 1 of 5
Absolute Maximum Ratings
Item
Symbol
Value
Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature
VRRM
VR IO
- 1
- 2 IFSM
- 3
Tj
30 30 0.5 1 150
Storage temperature
Tstg
- 55 to +150
Notes: 1. See from Fig.6 with Glass epoxy board.
2. Ta = 63°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm) Short form wave (θ180°C), VR = 15 V.
3. 10 ms sine wave 1...
