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RKR0503BKH - Silicon Schottky Barrier Diode

Features

  • Low reverse current drop and suitable for high efficiency rectifying.
  • Thin Ultra small Resin Package (TURP) is suitable for compact and high-density surface mount design. Ordering Information Part No. RKR0503BKH Laser Mark S9 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S9 2 1. Cathode 2. Anode REJ03G1741-0100 Rev.1.00 Nov 17, 2008 Page 1 of 5 RKR0503BKH Absolute Maximum Ratings Item Symbol Value Repetitive peak reverse voltage.

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Datasheet Details

Part number RKR0503BKH
Manufacturer Renesas
File Size 191.45 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet RKR0503BKH Datasheet

Full PDF Text Transcription

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RKR0503BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1741-0100 Rev.1.00 Nov 17, 2008 Features • Low reverse current drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for compact and high-density surface mount design. Ordering Information Part No. RKR0503BKH Laser Mark S9 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S9 2 1. Cathode 2. Anode REJ03G1741-0100 Rev.1.00 Nov 17, 2008 Page 1 of 5 RKR0503BKH Absolute Maximum Ratings Item Symbol Value Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature VRRM VR IO *1 *2 IFSM *3 Tj 30 30 0.5 1 150 Storage temperature Tstg –55 to +150 Notes: 1.
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