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RMLV0416EGBG - 4Mb Advanced LPSRAM

This page provides the datasheet information for the RMLV0416EGBG, a member of the RMLV0416E 4Mb Advanced LPSRAM family.

Description

The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies.

The RMLV0416E Series has realized higher density, higher performance and low power consumption.

Features

  • Single 3V supply: 2.7V to 3.6V.
  • Access time: 45ns (max. ).
  • Current consumption: ── Standby: 0.3µA (typ. ).
  • Equal access and cycle times.
  • Common data input and output ── Three state output.
  • Directly TTL compatible ── All inputs and outputs.
  • Battery backup operation Orderable part number information Orderable part number Access time Temperature range Package Shipping container RMLV0416EGSB-4S2#AA.
  • RMLV0416EGSB-4S2#HA.
  • RML.

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Datasheet preview – RMLV0416EGBG

Datasheet Details

Part number RMLV0416EGBG
Manufacturer Renesas
File Size 449.26 KB
Description 4Mb Advanced LPSRAM
Datasheet download datasheet RMLV0416EGBG Datasheet
Additional preview pages of the RMLV0416EGBG datasheet.

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Full PDF Text Transcription

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RMLV0416E Series 4Mb Advanced LPSRAM (256-kword × 16-bit) R10DS0205EJ0300 Rev.3.00 2021.8.18 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array. Features • Single 3V supply: 2.7V to 3.6V • Access time: 45ns (max.) • Current consumption: ── Standby: 0.3µA (typ.
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