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RMQS3A1818DGBA

Manufacturer: Renesas

RMQS3A1818DGBA datasheet PDF for 18-Mbit QDR-II SRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

RMQS3A1818DGBA datasheet preview

RMQS3A1818DGBA Datasheet Details

Part number RMQS3A1818DGBA
Datasheet RMQS3A1818DGBA RMQS3A1836DGBA Datasheet (PDF)
File Size 855.13 KB
Manufacturer Renesas
Description 18-Mbit QDR-II SRAM
RMQS3A1818DGBA page 2 RMQS3A1818DGBA page 3

RMQS3A1818DGBA Overview

It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration.

RMQS3A1818DGBA Key Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Clock z z z z
  • I/O z z z z z
  • Function z Four-tick burst for low DDR transaction size z Internally self-timed write control z Simple control logic for
  • Package z 165 FBGA package (13 x 15 x 1.4 mm)
  • 3 0 2 # A C 0
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Part Number Description
RMQS3A1836DGBA 18-Mbit QDR-II SRAM

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