RMQS3A1818DGBA
Description
The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter.
Key Features
- Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
- Clock z z z z
- Four-tick burst for low DDR transaction size
- Internally self-timed write control
- Simple control logic for easy depth expansion
- JTAG 1149.1 compatible test access port
