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RMQS3A1818DGBA - 18-Mbit QDR-II SRAM

Download the RMQS3A1818DGBA datasheet PDF (RMQS3A1836DGBA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 18-mbit qdr-ii sram.

Description

The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
  • Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
  • I/O z z z z z Separate independent read and write data.

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Note: The manufacturer provides a single datasheet file (RMQS3A1836DGBA-Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Datasheet RMQS3A1836DGBA, RMQS3A1818DGBA 18-Mbit QDR™ II SRAM 4-word Burst R10DS0247EJ0100 Rev.1.00 Jan. 13, 2015 Description The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. Features „ Power Supply z 1.
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