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RMQS3A1818DGBA Datasheet 18-Mbit QDR-II SRAM

Manufacturer: Renesas

Overview: Datasheet RMQS3A1836DGBA, RMQS3A1818DGBA 18-Mbit QDR™ II SRAM 4-word Burst R10DS0247EJ0100 Rev.1.00 Jan.

Download the RMQS3A1818DGBA datasheet PDF. This datasheet also includes the RMQS3A1836DGBA variant, as both parts are published together in a single manufacturer document.

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General Description

The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.

Key Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
  • Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
  • I/O z z z z z Separate independent read and write data.

More Datasheets from Renesas

Part Number Description
RMQS3A1836DGBA 18-Mbit QDR-II SRAM