TP65H480G4JSGB Overview
Key Specifications
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The TP65H480G4JSGB 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and Halogen-free packaging Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
