Renesas Electronics TP65H480G4JSGB
The TP65H480G4JSGB 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H480G4JSGB |
|---|---|
| Datasheet | TP65H480G4JSGB Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V SuperGaN GaN FET |
| Buy | Stock & Price |
DESCRIPTION
Related Literature● Printed Circuit Board Layout and Probing
● Recommendations for Vapor Phase Reflow
● Recommended External Circuitry for GaN FETs
● PQFN Tape and Reel Information Product Series and Ordering Information Part Number Package Package Configuration TP65H480G4JSGB-TR* 5x6 PQFN Source * “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H480G4JSGB PQFN (bottom view) Pin 1 Pin 9 Pin 4 Pin 8 D Pin 5 G KS S Cascode Schematic Symbol Cascode Device Structure
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Very low QRR
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging Benefits
● Achieves increased efficiency in both hard- and soft-switched circuits — Increased power density — Reduced system size and weight — Overall lower system cost
● Easy to drive with commonly-used gate drivers
● GSD...
