Renesas Electronics TP70H240G4ZS
The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP70H240G4ZS |
|---|---|
| Datasheet | TP70H240G4ZS Download |
| Manufacturer |  Renesas Electronics |
| Description | 700V GaN FET |
| Buy | Stock & Price |
DESCRIPTION
Benefits● Achieves increased efficiency in both hard- and soft-switched circuits
● Increased power density
● Reduced system size and weight
● Overall lower system cost
● Easy to drive with Si gate drivers Product and Schematic Diagrams TP70H240G4ZS TO252-3L
FEATURES
● Gen IV technology● JEDEC-qualified GaN technology
● Dynamic RDS(on)eff production tested
● Robust design, defined by
● Transient over-voltage capability
● Operation with E-mode gate drivers without need for Zener protection.
● Zero reverse recovery charge
● Reduced crossover loss
● RoHS compliant and Halogen-free packaging
● 2kV HBM ESD rating
APPLICATIONS
● Consumer● Power adapters
● Low power SMPS
● Lighting Key Specifications VDS (V) 700 VDSS(TR)(V) 800 RDS(on) (mΩ) maximum [1] 312 QOSS (nC) typical 17 QG (nC) typical 5.4 1. Dynamic RDS(on); see Figure 21 and Figure 22. Cascode Schematic Symbol Cascode Device Structure (MOSFET has integrated ESD Protection Circuit) R07DS1607EU0100 Rev.1.00 Jun 24, 2025 Page 1 © 2025 Renesas Electronics TP70H240G4ZS Datasheet Contents 1.
