TP70H240G4ZS Overview
The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It bines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge,...
TP70H240G4ZS Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Transient over-voltage capability
- Operation with E-mode gate drivers without
- Zero reverse recovery charge
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- 2kV HBM ESD rating