Datasheet Summary
μ PA2462T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0187EJ0100 Rev.1.00
Dec 06, 2010
Description
The μ PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2462T1Q Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Features
- 2.5 V drive available
- Low on-state resistance
⎯ RDS(on)1 = 21.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 26.5 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
- Built-in G-S protection diode against...