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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2719AGR
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain
FEATURES • Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A) • Low input capacitance Ciss = 2010 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8)
1.8 MAX.
1.44
0.05 MIN.
14 5.37 MAX.
6.0 ±0.3 4.4
+0.10 –0.05
0.15
1.27 0.78 MAX.
0.40
+0.10 –0.05
0.12 M
0.5 ±0.2
0.8 0.
UPA2719AGR Datasheet
