UPA2719AGR
DESCRIPTION
The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Lithium-Ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain
FEATURES
- Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS =
- 10 V, ID =
- 5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS =
- 4.5 V, ID =
- 5.0 A)
- Low input capacitance Ciss = 2010 p F TYP.
- Built-in gate protection diode
- Small and surface mount package (Power SOP8)
1.8 MAX.
0.05 MIN.
14 5.37 MAX.
6.0 ±0.3 4.4
+0.10
- 0.05
1.27 0.78 MAX.
+0.10
- 0.05
0.12 M
0.5 ±0.2
0.8 0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
- 30
Gate to Source Voltage (VDS = 0 V)
VGSS m20
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation Note3
ID(DC)...
