Datasheet Details
| Part number | UPA2719AGR |
|---|---|
| Manufacturer | Renesas |
| File Size | 302.71 KB |
| Description | P-CHANNEL POWER MOS FET |
| Datasheet |
 UPA2719AGR Datasheet
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General Description
The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit.
Key Features
- Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS =.
- 10 V, ID =.
- 5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS =.
- 4.5 V, ID =.
- 5.0 A).
- Low input capacitance Ciss = 2010 pF TYP.
- Built-in gate protection diode.
- Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. 14 5.37 MAX. 6.0 ±0.3 4.4 +0.10.
- 0.05 0.15 1.27 0.78 MAX. 0.40 +0.10.
- 0.05 0.12 M 0.5 ±0.2 0.8 0.10.
