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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2731UT1A
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A)
• Low Ciss: Ciss = 3620 pF TYP. • Small and surface mount package (8pin HVSON)
0.42
+0.1 −0.05
1.27
0.10 M
PACKAGE DRAWING (Unit: mm)
1
2 3 4
8 7 6 5
6 ±0.2
5.4 ±0.2
5 ±0.2 5.15 ±0.2
0.10 S
0.27 ±0.05 1.0 MAX.
+0.05 −0
0
ORDERING INFORMATION
PART NUMBER μ PA2731UT1A-E1-AZ Note μ PA2731UT1A-E2-AZ Note
PACKAGE 8pin HVSON 8pin HVSON
4.1 ±0.2
1 0.