UPA2731UT1A
DESCRIPTION
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.
FEATURES
- Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS =
- 10 V, ID =
- 22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS =
- 4.5 V, ID =
- 22 A)
- Low Ciss: Ciss = 3620 p F TYP.
- Small and surface mount package (8pin HVSON)
+0.1
- 0.05
0.10 M
PACKAGE DRAWING (Unit: mm)
2 3 4
8 7 6 5
6 ±0.2
5.4 ±0.2
5 ±0.2 5.15 ±0.2
0.10 S
0.27 ±0.05 1.0 MAX.
+0.05
- 0
ORDERING INFORMATION
PART NUMBER μ PA2731UT1A-E1-AZ Note μ PA2731UT1A-E2-AZ Note
PACKAGE 8pin HVSON 8pin HVSON
4.1 ±0.2
1 0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
0.6 ±0.15
0.7 ±0.15
Drain to Source Voltage (VGS = 0...
