UPA2731UT1A Description
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.
UPA2731UT1A Key Features
- Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = -10 V, ID = -22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = -4.5 V, ID = -22
- Low Ciss: Ciss = 3620 pF TYP
- Small and surface mount package (8pin HVSON)