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UPA2739T1A - P-CHANNEL POWER MOSFET

General Description

The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • VDSS =.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 46 A) ⎯ RDS(on) = 5.7 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 23 A).
  • 4.5 V Gate-drive available.
  • Thin type surface mount package with heat spreader.
  • Halogen free Ordering Information 8-pin HVSON(6051) Part No. μ PA2739T1A-E2-AY∗1 LEAD.

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Full PDF Text Transcription for UPA2739T1A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA2739T1A. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet μPA2739T1A P-channel MOSFET –30 V, –85 A, 2.8 mΩ R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 Description The μ PA2739T1A is P-channel MOS Field Effect Transistors de...

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scription The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A) ⎯ RDS(on) = 5.7 mΩ MAX. (VGS = −4.5 V, ID = −23 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free Ordering Information 8-pin HVSON(6051) Part No. μ PA2739T1A-E2-AY∗1 LEAD PLATING PACKING Pure Sn Tape 3000 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Package 8-pin HVSON(6051) 0.1 g TYP.

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