UPA2739T1A
Description
The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- VDSS =
- 30 V (TA = 25°C)
- Low on-state resistance
⎯ RDS(on) = 2.8 mΩ MAX. (VGS =
- 10 V, ID =
- 46 A) ⎯ RDS(on) = 5.7 mΩ MAX. (VGS =
- 4.5 V, ID =
- 23 A)
- 4.5 V Gate-drive available
- Thin type surface mount package with heat spreader
- Halogen free
Ordering Information
8-pin HVSON(6051)
Part No. μ PA2739T1A-E2-AY∗1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package 8-pin HVSON(6051) 0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3
Symbol VDSS...
