UPA2743T1A
DESCRIPTION
The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook puter.
FEATURES
- Low on-state resistance
RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
- Built-in gate protection diode
- Thin type surface mount package with heat spreader (8-pin HVSON (6051))
- Ro HS pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2
ID(DC) ID(pulse) PT1 PT2
±29 ±170 1.5 4.6
Channel Temperature
Tch 150 °C
Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3
Tstg
- 55 to +150
°C
IAS 29 A
84.1 m J
+0.1
- 0.05
0.10 M
PACKAGE DRAWING (Unit: mm)
2 3 4
8 7 6 5
6 ±0.2
5.4 ±0.2
5 ±0.2 5.15...
