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UPA2811T1L - MOS FIELD EFFECT TRANSISTOR

General Description

The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Key Features

  • VDSS.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 19 A).
  • 4.5 V Gate-drive available.
  • Built-in gate protection diode.
  • Small & thin type surface mount package with heat spreader (8-pin HVSON).
  • Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD.

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Datasheet Details

Part number UPA2811T1L
Manufacturer Renesas
File Size 242.49 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2811T1L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet μ PA2811T1L MOS FIELD EFFECT TRANSISTOR Description R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A) • 4.5 V Gate-drive available • Built-in gate protection diode • Small & thin type surface mount package with heat spreader (8-pin HVSON) • Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode.