UPA2811T1L Description
R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
UPA2811T1L Key Features
- VDSS -30 V (TA = 25°C)
- Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = -10 V, ID = -19 A)
- 4.5 V Gate-drive available
- Built-in gate protection diode
- Small & thin type surface mount package with heat spreader (8-pin HVSON)
- Halogen free and RoHS pliant