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UPA2811T1L Datasheet

Manufacturer: Renesas
UPA2811T1L datasheet preview

Datasheet Details

Part number UPA2811T1L
Datasheet UPA2811T1L_Renesas.pdf
File Size 242.49 KB
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
UPA2811T1L page 2 UPA2811T1L page 3

UPA2811T1L Overview

R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

UPA2811T1L Key Features

  • VDSS -30 V (TA = 25°C)
  • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = -10 V, ID = -19 A)
  • 4.5 V Gate-drive available
  • Built-in gate protection diode
  • Small & thin type surface mount package with heat spreader (8-pin HVSON)
  • Halogen free and RoHS pliant
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