UPA650TT Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA650TT is a switching device, which can be driven directly by a 1.8 V power source. This device Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features - 1.8 V drive available - Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = - 4.5 V, ID = - 2.5 A) RDS(on)2 = 68 mΩ MAX. (VGS = - 2.5 V, ID = - 2.5 A) RDS(on)3 = 114 mΩ MAX. (VGS = - 1.8 V, ID = - 1.5 A) 0.25±0.1 PACKAGE DRAWING (Unit: mm) 2.0±0.2 6 54 1 23 1.6 2.1±0.1 0~0.05 0.65 0.65 MAX. 0.8 +0.1 -...