Renesas Electronics X28C010
X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. The X28C010/X28HT010 features the JEDEC approved pin out for byte-wide memories, compatible with industry standard EEPROMs. The X28C010/X28HT010 supports a 256-byte page write operation, effectively providing a 19µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds.| Part No. | X28C010 |
|---|---|
| Datasheet | X28C010 Download |
| Manufacturer |  Renesas Electronics |
| Description | Byte Alterable EEPROM |
| Buy | Stock & Price |
FEATURES
● Access time: 120ns● Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed
● No erase before write
● No complex programming algorithms
● No overerase problem
● Low power CMOS - Active: 50mA - Standby: 500µA
● Software data protection - Protects data against system level inadvertent writes
● High speed page write capability
● Highly reliable Direct Write™ cell - Endurance: 100,000 write cycles - Data retention: 100 years
● Early end of write detection - DATA polling - Toggle bit polling
● X28HT010 is fuly functional @ +175°C Pinouts NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS CERDIP Flat Pack SOIC (R) 1 32 2 31 3 30 4 29 5 28 6 27 7 26 8 X28C010 25 9 24 10 23 11 22 12 21 13 20 14 19 15 18 16 17 VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 PGA 15I/O0 17I/O2 19I/O3 21I/O5 22I/O6 A1 A0 I/O1 VSS I/O4 I/O7 CE 13 14 16 18 20 23 24 12A2 11A3 25A10 OE 26 A4 10 A5 9 X28C010 (Bottom View) A11 A 9 2...
