Renesas Electronics X28HC256
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s.| Part No. | X28HC256 |
|---|---|
| Datasheet | X28HC256 Download |
| Manufacturer |  Renesas Electronics |
| Description | Byte Alterable EEPROM |
| Buy | Stock & Price |
FEATURES
● Access time: 90ns● Simple byte and page write - Single 5V supply - No external high voltages or VP-P control circuits - Self timed - No erase before write - No complex programming algorithms - No overerase problem
● Low power CMOS - Active: 60mA - Standby: 500µA
● Software data protection - Protects data against system level inadvertent writes
● High speed page write capability
● Highly reliable Direct Write™ cell - Endurance: 100,000 cycles - Data retention: 100 years
● Early end of write detection - DATA polling - Toggle bit polling
● RoHS compliant FN8108 Rev 5.00 August 27, 2015 A0 TO A14 ADDRESS INPUTS CE OE WE VCC VSS X BUFFERS LATCHES AND DECODER 256k BIT EEPROM ARRAY Y BUFFERS LATCHES AND DECODER CONTROL LOGIC AND TIMING I/O BUFFERS AND LATCHES I/O0 TO I/O7 DATA INPUTS/OUTPUTS FIGURE 1. BLOCK DIAGRAM Page 1 of 19 X28HC256 Ordering Information PART NUMBER (Note 4) PART MARKING ACCESS TIME (ns) TEMP. RANGE (°C) PACKAGE PKG. DWG. # X28HC256JZ-15 (Notes 1, 3) X28HC256J-...
