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uPA503CT - P-Channel MOSFET

General Description

The µPA503CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

Key Features

  • Two MOSFET circuits (Two source common).
  • Directly driven by a 4.5 V power source.
  • Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2  MAX. (VGS = -4.5 V, ID = -50 mA) Ordering Information Part Number Lead Plating Packing Package µPA503CT-T1-A/AT -A:Sn-Bi, -AT:Pure Sn 3000p/Reel SC-74A (5pMM) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking UF Absolute Maximum Ratin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet µPA503CT P-CHANNEL MOSFET FOR SWITCHING R07DS1279EJ0200 Rev.2.00 Jul 08, 2015 Description The µPA503CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Two MOSFET circuits (Two source common)  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2  MAX. (VGS = -4.5 V, ID = -50 mA) Ordering Information Part Number Lead Plating Packing Package µPA503CT-T1-A/AT -A:Sn-Bi, -AT:Pure Sn 3000p/Reel SC-74A (5pMM) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.