HAT1069C Description
HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0300 Rev.3.00 Oct 19, 2007.
HAT1069C Key Features
- Low on-resistance RDS(on) = 38 mΩ typ (at VGS = -4.5 V)
- High speed switching
- Capable of 1.8 V gate drive
- High density mounting