HAT1089C Description
HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun.
HAT1089C Key Features
- Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = -4.5 V)
- Low drive current
- 2.5 V gate drive devices
- High density mounting
- Part: HAT1089C
- Manufacturer: Renesas (official site)
- Size: 108.27 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
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