RTC6649E Datasheet | RichWave

DESCRIPTION The RTC6649E is a power amplifier (PA) designed for 2.4~2.5GHz frequency range, patible with 802.11b/g/n wireless LAN system. The device is manufactured based on advanced In Ga P/Ga As HBT (Hetero-junction Bipolar Transistor) process. The amplifier consists of 3 gain stages with inter-stage matching, build-in input matching network, and a power detector for close loop power control operation. In 802.11g mode (OFDM 64QAM, 54Mbps), it is capable to provide a low EVM (Error-Vector magnitude) of 3% at +26d Bm and 23.5d Bm linear output power by single supply voltage 5V and 3.3V, respectively. The device is provided in a tiny industrial standard 16-lead surface mount package QFN 3mm X3mm. FEATURE - 2.4 ~2.5GHz Frequency Range - 3 ~ 5V Single Supply Voltage - Linear Output Power for 802.11g usage : +26d Bm under single 5V supply - Linear Output Power for 802.11g usage : +23.5d Bm under single 3.3V supply - Small Signal Gain : 34 d B - On-chip Input Matching - QFN 3mm X3mm 16 Lead Package - Lead-Free Ro HS pliant - RTC6649 Pin patible APPLICATION - High Power WLAN applications - IEEE 802.11b/g/n Wireless LAN System - 2.4GHz ISM Band Application - 2.4GHz Cordless Phones PIN OUT (top view) Vcc1 NC Vcc2 NC 16 15 14 13 NC 1 12 Vcc3 RFin 2 11 RFout RFin 3 10 RFout NC 4 9 PD Vccb Vref11 Vref2 NC .richwave..tw Specifications subject to change without notice Confidential Proprietary V1.0 Data Sheet PIN FUNCTION DESCRIPTION Sep 2011 Pin Function Description...