RichWave RTC6691
The RTC6691 silicon-germanium (SiGe) power amplifier (PA) is designed to operate in 2.4GHz ISM band, compatible with 802.11b/g wireless LAN system with high power, high gain. The Amplifier consists of 3 gain stages with inter-stage matching, build-in input matching network, and a power detector for close loop power control operation. The device is packaged in a tiny industry-standard 16-lead surface mount package QFN16 3x3.| Part No. | RTC6691 |
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| Datasheet | RTC6691 Download |
| Manufacturer |  RichWave |
| Description | silicon-germanium (SiGe) power amplifier |
| Buy | Stock & Price |
DESCRIPTION
In 802.11g mode (OFDM 64QAM, 54Mbps), it provides a low EVM (Error-Vector magnitude) of 3% at +21.5dBm linear output power. FEATURE●
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● 3.3V Power Supply Maximum Linear Output Power for 11g usage : +21.5 dBm ( 54Mbps OFDM 64 QAM ) Maximum Linear Output Power for 11b usage : +26 dBm ( 11Mbps CCK ) Small signal gain : 33.5dB On-chip input matching Operation ambient temperature: -40 ~ +85 °C Lead-free RoHS compliant APPLICATION
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● High Power WLAN applications IEEE 802.11b/g Wireless LAN System 2.4GHz ISM Band Application 2.4GHz Cordless Phones PINOUT (top view) 1 Specifications subject to change without notice Preliminary Confidential Proprietary Free Datasheet RTC6691 V0.3 PIN FUNCTION
DESCRIPTION
Pin Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC RFin RFin NC Vccb Vref1 Vref2 Det_ref Det RFout RFout Vcc3 NC Vcc2 NC Vcc1 Data Sheet Jul 2006DESCRIPTION
Not connected RF input. Input matching network is built on chip. Same as pin 2 Not connected Power supply for bias circuit, typically 3.3V Bias Control voltage 1. typically 2.9V.
