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RT9607A - Dual Channel Synchronous-Rectified Buck MOSFET Driver

Download the RT9607A datasheet PDF. This datasheet also covers the RT9607 variant, as both devices belong to the same dual channel synchronous-rectified buck mosfet driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The RT9607/A is a dual power channel MOSFET driver specifically designed to drive four power N-MOSFETs in a synchronous-rectified buck converter topology.

Key Features

  • z z z z z z z z z Drives Four N-MOSFETs Adaptive Shoot-Through Protection Propagation Delay 40ns Support High Switching Frequency Fast Output Rise Time 5V to 12V Gate-Drive Voltages for Optimal Efficiency Tri-State Input for Bridge Shutdown Supply Under-Voltage Protection RoHS Compliant and 100% Lead (Pb)-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RT9607_RichtekTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RT9607A
Manufacturer Richtek Technology
File Size 343.83 KB
Description Dual Channel Synchronous-Rectified Buck MOSFET Driver
Datasheet download datasheet RT9607A Datasheet

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Other Datasheets by Richtek Technology

Part Number Description
RT9607 Dual Channel Synchronous-Rectified Buck MOSFET Driver
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RT9607/A Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description The RT9607/A is a dual power channel MOSFET driver specifically designed to drive four power N-MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RichTek’ s series of Multi-Phase Buck PWM controllers provide a complete core voltage regulator solution for advanced microprocessors. The RT9607/A can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection. The output drivers of the part are capble to driver a 3nF load in 30/40ns rising/falling time with fast propagation delay from input transition to the gate of the power MOSFET.