ROHM Semiconductor 1SS355VMFH
Switching Diode
| Part No. | 1SS355VMFH |
|---|---|
| Datasheet | 1SS355VMFH Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
High reliability Small mold type High speed switching●Inner Circuit
●Application High speed switching
●Structure Epitaxial planar
●
ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Junction temperature Tj Storage temperature Tstg●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Ct Reverse recoverytime trr ※Caution：static electricity
●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) Basic Ordering Unit(pcs) Taping Code Marking 8 3000 TE-17 A Conditions - Limits Unit 80 V - 90 V - 100 mA - 225 mA t=1s 500 mA - 150 ℃ - -55 ～ 150 ℃ Conditions IF=100mA VR=80V VR=0.5V f=1.0MHz VR=6.0V IF=10mA RL=100Ω Min. Typ. Max. Unit - - 1.2 V - - 100 nA - - 3.0 pF - - 4.0 ns © 2016 ROHMCo., Ltd.All rights reserved. 1/4 2016/03/17_Rev.003 1SS355VMFH
●Characteristic Curves Data sheet © 2016 ROHMCo., Ltd.All rights reserved.
