ROHM Semiconductor 1SS376
Switching diode
APPLICATIONS
High voltage switching 0.3±0.05 CATHODE MARK 0.1±0.05 !FEATURES
1) Small surface mounting type. (UMD2) 2) VRM=300V guaranteed. 3) High reliability. 1.7±0.1 !Construction Silicon epitaxial planar 1.25±0.1 Model identification label 2.5±0.2 0.7 +0.2 −0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !External dimensions (Units : mm) !Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (10ms) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 300 250 300 100 2 125 −55~+125 Unit V V mA mA A °C °C !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR IR CT trr Min. − − − − − Typ. − − − − − Max. 1.2 0.2 100 3 100 Unit V µA µA pF ns IF=100mA VR=250V VR=300V Conditons VR=0V, f=1MHz IR=30mA, IF=30mA, Irr=3mA 1SS376 Diodes !Electrical characteristic curves...