24L04F-W Datasheet | ROHM

feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL- SDA for noise suppression. 14) Initial data FFh in all address. z Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Limits - 0.3 to +6.5 800(DIP8) 450(SOP8) Power dissipation Pd 450(SOP-J8) 300(SSOP-B8) 310(MSOP8) Storage temperature Operating temperature Terminal voltage ∗1 ∗2 ∗3 ∗4 Unit V ∗1 ∗2 ∗2 ∗3 ∗4 m W Tstg Topr - - 65 to +125 - 40 to +85 - 0.3 to VCC+0.3 °C °C Reduced by 8.0m W for each increase in Ta of 1°C over 25°C. Reduced by 4.5m W for each increase in Ta of 1°C over 25°C. Reduced by 3.0m W for each increase in Ta of 1°C over 25°C. Reduced by 3.1m W for each increase in Ta of 1°C over 25°C. 1/25 Memory ICs BR24L04-W / BR24L04F-W / BR24L04FJ-W BR24L04FV-W / BR24L04FVM-W Symbol VCC VIN Limits 1.8 to 5.5 0 to VCC Unit V V z Remended operating conditions (Ta=25°C) Parameter Supply voltage Input voltage z DC operating characteristics (Unless otherwise specified Ta=- 40 to 85°C, VCC=1.8 to 5.5V) Parameter .. "HIGH" input volatge 1 "LOW" input volatge 1 "HIGH" input volatge 2 "LOW" input volatge 2 "LOW" output current 1 "LOW" output current 2 Input leakage current Output leakage current Symbol VIH1 VIL1 VIH2 VIL2 VOL1 VOL2 ILI ILO ICC1 Operating current ICC2 Standby current ISB - - - - 0.5 2.0 m A µA Min. 0.7VCC - 0.8VCC - - - - 1 - 1 - Typ. - - - - - - - - - Max. - 0.3VCC - 0.2VCC 0.4 0.2 1 1 2.0 Unit V V V V V V µA µA m A Conditions 2.5V≤VCC≤5.5V 2.5V≤VCC≤5.5V 1.8V≤VCC<2.5V 1.8V≤VCC<2.5V IOL=3.0m A, 2.5V≤VCC≤5.5V, (SDA) IOL=0.7m A, 1.8V≤VCC≤5.5V, (SDA) VIN=0V to VCC VOUT=0V to VCC VCC=5.5V, f SCL=400k Hz, t WR=5ms, Byte Write, Page Write VCC=5.5V, f SCL=400k Hz Random Read, Current Read, Sequential Read VCC=5.5V, SDA- SCL=VCC, A0, A1,...