ROHM Semiconductor 2SA1515S
Medium Power Transistor
FEATURES
1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858●Structure Epitaxial planar type PNP silicon transistor
●Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1 3Min. +0.2 −0.1 4.0 −+ 0.3 (15Min.) 2.5 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2 0.4 0.1 1.5+− 0.1 0.4 +0.1 −0.05 5 0.45 +0.15 −0.05 2.5 +0.4 −0.1 (1) Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter ∗Abbreviated symbol: BA (1) (2) (3) ROHM : SPT EIAJ : SC-72 2SB1237 6.8+− 0.2 2.5+− 0.2 0.5 0.45 +0.15 −0.05 (1) Emitter (2) Collector (3) Base 4.4 −+ 0.2 1.0 0.9 0.65Max. 14.5 −+ 0.5 0.5+− 0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV ∗ Denotes hFE 1.05 0.45+− 0.1 (1) Emitter (2) Collector (3) Base