ROHM Semiconductor 2SA1577FRA
Medium Power Transistor
| Part No. | 2SA1577FRA |
|---|---|
| Datasheet | 2SA1577FRA Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F.RA●Structure Epitaxial planer type PNP silicon transistor
●Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature ∗PC MAX. must not be exceeded. Tstg Limits −40 −32 −5 −0.5 0.2 150 −55 to +150 Unit V V V A∗ W °C °C
●Dimensions (Unit : mm) 22SSAA11557777FRA 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.25±0.1 2.1±0.1 0.1 (3) 0.3 +−00.1 All terminals have same dimensions 0∼0.1 0.15±0.05 (1) Emitter ROHM : UMT3 EIAJ : SC-70 (2) Base (3) Collector ∗Abbreviated symbol: H ∗ Denotes hFE
●Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector outoff current ICBO R...
