ROHM Semiconductor 2SA1727
High-voltage Switching Transistor
| Part No. | 2SA1727 |
|---|---|
| Datasheet | 2SA1727 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | High-voltage Switching Transistor |
| Buy | Stock & Price |
FEATURES
1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). 100mA / 10mA. Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1812 2SA1727 2SA1776 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400 7 0.5 1.0 0.5 2 1 10 1 150 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater. Unit V V V A (DC) A (Pulse) W W W W (Tc 25°C) W °C °C 1 2 3 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SA1812 MPT3 PQ AJ T100 3000 Denotes hFE 2SA1727 CPT3 PQ TL 3000 2SA1776 ATV PQ TV2 2500 Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown volta...
