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2SA1727 - High-voltage Switching Transistor

Key Features

  • 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). 100mA / 10mA. Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1812 2SA1727 2SA1776 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400.

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Datasheet Details

Part number 2SA1727
Manufacturer ROHM
File Size 194.98 KB
Description High-voltage Switching Transistor
Datasheet download datasheet 2SA1727 Datasheet

Full PDF Text Transcription (Reference)

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Transistors 2SA1812 / 2SA1727 / 2SA1776 High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). 100mA / 10mA. Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1812 2SA1727 2SA1776 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400 7 0.5 1.0 0.5 2 1 10 1 150 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.