ROHM Semiconductor 2SA1797
Power Transistor
| Part No. | 2SA1797 |
|---|---|
| Datasheet | 2SA1797 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
Power Transistor (−50V, −3A) 2SA1797 zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SC4672. zDimensions (Unit : mm) MPT3 4.5 1.6 1.5 2.5 0.5 4.0 zPackaging specifications Type Package hFE Marking ∗ Code Basic ordering unit (pieces) ∗Denotes hFE 2SA1797 MPT3 PQ AG T100 1000 (1)Base (2)Collector (3)Emitter (1) (2) (3) 0.4 0.5 1.5 1.5 3.0 0.4 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1797 Junction temperature Storage temperature Symbol VCBO VCEO VEBO ∗1 IC PC ∗2 Tj Tstg Limits −50 −50 −6 −3 −6 0.5 2 150 −55 to +150 ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. + + Unit V V V A (DC) A (Pulse) W °C °C 1.0 0.4 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakd
