2SA1862 Datasheet PDF

2SA1862 Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Typ. VCE (sat) = −0.3V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw=10ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A (DC) A (Pulse) W W (Tc=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −400 −400 −7 −2 −4 1 10 150 −55 to +150 ∗ °C °C zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA1862 CPT3 P TL 2500 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collect...