2SA1862 - High-voltage Switching Transistor

ROHM

Key Features

1) High breakdown voltage. (BVCEO =.
400V) 2) Low saturation voltage. (Typ. VCE (sat) =.
0.3V at IC / IB =.
500mA /.
100mA) 3) High switching speed, typically tf = 0.4µs at IC =.
1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base volta.

2SA1862 high-voltage switching transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SA1862
Manufacturer	ROHM
File Size	93.05 KB
Description	High-voltage Switching Transistor
Datasheet	2SA1862 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SA1862	(2SA1807 / 2SA1862) High-Voltage Switching Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1862 Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Typ. VCE (sat) = −0.3V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A. 4) Wide SOA (safe operating area). zExternal dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.