ROHM Semiconductor 2SA2005
Transistors
| Part No. | 2SA2005 |
|---|---|
| Datasheet | 2SA2005 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Transistors |
| Buy | Stock & Price |
FEATURES
1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³●¬¬»® ïòî ïòí ðòè îòëì øï÷ øî÷ øí÷ îòëì ðòéë îòêAPPLICATIONS
Power amplifier Velosity modulation Complements ÐÒÐ îÍßîððë ÒÐÒ îÍÝëëïï Absolute maximum ratings (Ta=25 C) п®¿³»¬»® ݱ´´»½¬±®ó¾¿-» ª±´¬¿¹» ݱ´´»½¬±®ó»³●¬¬»® ª±´¬¿¹» Û³●¬¬»®ó¾¿-» ª±´¬¿¹» ݱ´´»½¬±® ½«®®»²¬ ÜÝ Ð«´-» ͧ³¾±´ ÊÝÞÑ ÊÝÛÑ ÊÛÞÑ ×Ý ×ÝÐ ÐÝ Ì¶ Ì-¬¹ Ô●³●¬–ïêð –ïêð –ë –ïòë –í î îð ïëð –ëë ¬± õïëð ˲●¬ Ê Ê Ê ß ß ï Packaging specifications and hFE п½µ¿¹» ̧°» ¸ÚÛ îÍÝëëïï Û Ý±¼» Þ¿-●½ ±®¼»®●²¹ «²●¬ ø°●»½»-÷ Ì¿°●²¹ – ëðð hFE values are classified as follows: ׬»³ ¸ ÚÛ Û ïð𠬱 îðð ݱ´´»½¬±® °±©»® ¼●--●°¿¬●±² Ö«²½¬●±² ¬»³°»®¿¬«®» ͬ±®¿¹» ¬»³°»®¿¬«®» ï ¬ãïðð³- ÉøÌ¿ãîëpÝ÷ Éø̽ãîëpÝ÷ pÝ pÝ Electrical characteristics (Ta=25 C) п®¿³»¬»® ݱ´´»½¬±®ó»³●¬¬»® ¾®»¿µ¼±©² ª±´¬¿¹» ݱ´´»½¬±®ó¾¿-» ¾®»¿µ¼±©² ª±´¬¿¹» Û³...