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2SA2017 Datasheet PDF

ROHM Semiconductor 2SA2017

Power Transistor

Part No. 2SA2017
Datasheet 2SA2017 Download
Manufacturer
ROHM Semiconductor
Description Power Transistor
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2SA2017 datasheet page 1 preview

FEATURES

1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -5 -4 -6 30 150 -55~+150 Unit V V V A A(Pulse) W(Tc = 25°C) °C °C 2SA2017 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA2017 TO-220FN E 500 !Electrical characteristics (Ta = 25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer rat