ROHM Semiconductor 2SA2048
Medium power transistor
FEATURES
1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 !APPLICATIONS
Small signal low frequency amplifier High speed switching !External dimensions (Units : mm) TSMT3 2.8 1.6 (3) 0.4 2.9 0.16 1.9 0.95 0.95 (2) (1) 0 0.1 0.7 0.85 1.0MAX (1)Base (2)Emitter (3)Collector 0.3 0.6 Each lead has same dimensions Abbreviated symbol : UL !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SA2048 Taping TL 3000 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Limits −30 −30 −6 −1.0 −2.0 500 150 −55~+150 Unit V V V A A ∗1 mW ∗2 °C °C 1/3 Transistor 2SA2048 !Electrical characteristics (Ta=25°C) Parameter Symbol Min.